The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Sep. 27, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chia-Cheng Chang, Baoshan Township, TW;
Jau-Shian Liang, New Taipei, TW;
Wen-Chen Lu, Zhubei, TW;
Chin-Min Huang, Taichung, TW;
Ming-Hui Chih, Luzhou, TW;
Cherng-Shyan Tsay, Toufen Township, TW;
Chien-Wen Lai, Hsinchu, TW;
Hua-Tai Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a method of performing an optical proximity correction (OPC) procedure that provides for a high degree of freedom by using an approximation design layer. In some embodiments, the method is performed by forming an integrated chip (IC) design having an original design layer with one or more original design shapes. An approximation design layer, which is different from the original design layer, is generated from the original design layer. The approximation design layer is a design layer that has been adjusted to remove features that may cause optical proximity correction (OPC) problems. An optical proximity correction (OPC) procedure is then performed on the approximation design layer. By performing the OPC procedure on the approximation design layer rather than on the original design layer, characteristics of the OPC procedure can be improved.