The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Feb. 22, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Takayuki Tsukamoto, Yokkaichi, JP;
Jun Nishimura, Kuwana, JP;
Masahiro Une, Hiroshima, JP;
Takafumi Shimotori, Kawasaki, JP;
Yoichi Minemura, Yokkaichi, JP;
Hiroshi Kanno, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor memory device according to an embodiment comprises: a memory cell array including memory cells, each of the memory cells disposed at each of intersections of first lines and second lines and including a variable resistor; and a control circuit configured to apply a first voltage to a selected first line and to apply a second voltage having a voltage value which is smaller than that of the first voltage to a selected second line, such that a selected memory cell is applied with a first potential difference required in an operation of the selected memory cell. The control circuit is configured such that when the first potential difference is applied a plurality of times to a plurality of the selected memory cells to execute the operation, the number of selected memory cells simultaneously applied with the first potential difference can be changed.