The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Jun. 27, 2012
Applicants:
Elijah V. Karpov, Portland, OR (US);
Kuo-wei Chang, Cupertino, CA (US);
Gianpaolo Spadini, Los Gatos, CA (US);
Inventors:
Elijah V. Karpov, Portland, OR (US);
Kuo-Wei Chang, Cupertino, CA (US);
Gianpaolo Spadini, Los Gatos, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/144 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 27/2409 (2013.01); H01L 27/2427 (2013.01);
Abstract
A memory may include two electrodes and phase change material having an amorphous reset state and a partially crystalized set state, coupled between the two electrodes. The phase change material in the set state may have a highly nonlinear current-voltage response in a subthreshold voltage region. The phase change material may be an alloy of indium, antimony, and tellurium.