The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Dec. 31, 2012
Win Semiconductor Corp., Kuei Shan Hsiang, Tao Yuan Shien, TW;
Shinichiro Takatani, Tao Yuan Shien, TW;
Jung-Tao Chung, Tao Yuan Shien, TW;
Chi-Wei Wang, Tao Yuan Shien, TW;
Cheng-Guan Yuan, Tao Yuan Shien, TW;
Shih-Ming Joseph Liu, Tao Yuan Shien, TW;
WIN Semiconductors Corp., Kuei Shan Hsiang, Tao Yuan Shien, TW;
Abstract
The present invention relates to compound semiconductor ESD protection devices of three types. The device comprises a multi-gate enhancement mode PET (E-PET). For the type I compound semiconductor ESD protection device, the source electrode is connected to the plural gate electrodes through at least one first resistor, and the drain electrode is connected to the plural gate electrodes through at least one second resistor. For the type II compound semiconductor ESD protection device, at least one of the plural gate electrodes are connected to at least one of the inter-gate regions between two adjacent gate electrodes through at least one fourth resistor. For the type compound semiconductor ESD protection device, the plural gate electrodes are connected to the source or drain electrodes through at least one seventh resistor. Any two gate electrodes in the three types of compound semiconductor ESD protection devices can be connected by a resistor.