The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Jan. 13, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Mukta G. Farooq, Hopewell Junction, NY (US);

Richard P. Volant, New Fairfield, CT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/498 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49827 (2013.01); H01L 21/76898 (2013.01); H01L 21/76802 (2013.01); H01L 21/76879 (2013.01); H01L 23/481 (2013.01); H01L 24/05 (2013.01); H01L 2224/05647 (2013.01);
Abstract

A structure including a substrate having a backside, a first through silicon via having sides, a bottom surface, and a first height protruding from the backside of the substrate, and a first conductor facing the backside of the substrate and in electrical contact with the first through silicon via. The structure further including a second through silicon via having sides, a bottom surface, and a second height protruding from the backside of the substrate, wherein the second height is less than the first height, and a second conductor facing the backside of the substrate and in electrical contact with the second through silicon via, where a first via liner contacts the sides and the bottom surface of the first through silicon via and contacts the bottom surface but not the sides of the second through silicon via.


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