The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Jun. 07, 2012
Akihiko Furukawa, Tokyo, JP;
Yasuhiro Kagawa, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Kazuyasu Nishikawa, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Yasuhiro Kagawa, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Kazuyasu Nishikawa, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A power semiconductor device includes a second conductive type sense outer-peripheral well formed to surround a plurality of sense wells on the surface of a drift layer, a first conductive type main-cell source region selectively formed on the surface of the main cell well, a first conductive type sense source region selectively formed on the surface of the sense well, a first conductive type capacitor lower electrode region selectively formed on the surface of the sense outer-peripheral well, a gate insulation film formed on the channel regions and on the sense outer-peripheral well, a gate electrode formed on the gate insulation film, and a sense pad electrically connected to the sense well and the sense source region as well as on the sense outer-peripheral well and the capacitor lower electrode region.