The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
May. 30, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chih-Yang Pai, Hsinchu, TW;
Kuo-Chi Tu, Hsinchu, TW;
Wen-Chuan Chiang, Hsinchu, TW;
Chung-Yen Chou, New Taipei, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01); H01L 27/10894 (2013.01); H01L 28/90 (2013.01); H01L 21/76832 (2013.01);
Abstract
A semiconductor device includes a first insulating layer, a contact plug formed in the first insulating layer, a first etch stop layer over the first insulating layer, a second etch stop layer over the first etch stop layer, a second insulating layer over the second etch stop layer and having a contact opening over the contact plug, and a conductive layer disposed in the contact opening and over the contact plug. The contact opening is substantially free of the second etch stop layer, and the first etch stop layer is present in the contact opening.