The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Nov. 20, 2012
Applicant:

Brewer Science Inc., Rolla, MO (US);

Inventors:

Tantiboro Ouattara, Eureka, MO (US);

Carlton Washburn, Rolla, MO (US);

Vandana Krishnamurthy, Rolla, MO (US);

Douglas Guerrero, Rolla, MO (US);

Aline Collin, Fairbanks, AK (US);

Assignee:

Brewer Science Inc., Rolla, MO (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01); G03F 7/09 (2006.01); G03F 7/20 (2006.01); G03F 7/11 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
G03F 7/092 (2013.01); G03F 7/2004 (2013.01); G03F 7/11 (2013.01); B82Y 30/00 (2013.01); Y10S 977/755 (2013.01); B82Y 40/00 (2013.01);
Abstract

The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues.


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