The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Mar. 12, 2014
Icemos Technology Ltd., Belfast, GB;
Samuel Anderson, Tempe, AZ (US);
Takeshi Ishiguro, Fukushima-ken, JP;
Kenji Sugiura, Kanagawa-ken, JP;
Icemos Technology, Ltd., Belfast, GB;
Abstract
A superjunction device includes a substrate having first and second main surfaces and a first doping concentration of a first dopant. A first semiconductor layer having a second doping concentration of the first dopant is formed on the substrate. A second semiconductor layer is formed on the first layer and has a main surface. At least one trench extends from the main surface at least partially into the first semiconductor layer. A first region having a third doping concentration of the first dopant extends at least partially between the main surface and the first layer. A second region having a fourth doping concentration of a second dopant is disposed between the first region and a trench sidewall and extends at least partially between the main surface and the first layer. A third region having a fifth doping concentration of the first dopant is disposed proximate the main surface.