The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Jun. 20, 2012
Jam-wem Lee, Zhubei, TW;
Tzu-heng Chang, New Taipei, TW;
Tsung-che Tsai, Hsin-Chu, TW;
Ming-hsiang Song, Shin-Chu, TW;
Jam-Wem Lee, Zhubei, TW;
Tzu-Heng Chang, New Taipei, TW;
Tsung-Che Tsai, Hsin-Chu, TW;
Ming-Hsiang Song, Shin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Methods and apparatus for increased holding voltage SCRs. A semiconductor device includes a semiconductor substrate of a first conductivity type; a first well of the first conductivity type; a second well of a second conductivity type adjacent to the first well, an intersection of the first well and the second well forming a p-n junction; a first diffused region of the first conductivity type formed at the first well and coupled to a ground terminal; a first diffused region of the second conductivity type formed at the first well; a second diffused region of the first conductivity type formed at the second well and coupled to a pad terminal; a second diffused region of the second conductivity type formed in the second well; and a Schottky junction formed adjacent to the first diffused region of the second conductivity type coupled to a ground terminal. Methods for forming devices are disclosed.