The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Mar. 25, 2013
Applied Materials, Inc., Santa Clara, CA (US);
Bryan Liao, Saratoga, CA (US);
Katsumasa Kawasaki, Los Gatos, CA (US);
Yashaswini Pattar, Palo Alto, CA (US);
Sergio Fukuda Shoji, San Jose, CA (US);
Duy D. Nguyen, Milpitas, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Ankur Agarwal, Mountain View, CA (US);
Phillip Stout, Santa Clara, CA (US);
Shahid Rauf, Pleasanton, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.