The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Jun. 12, 2012
Applicants:
Chin-i Liao, Tainan, TW;
Chin-cheng Chien, Tainan, TW;
Inventors:
Chin-I Liao, Tainan, TW;
Chin-Cheng Chien, Tainan, TW;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A MOS transistor process includes the following steps. A gate structure is formed on a substrate. A source/drain is formed in the substrate beside the gate structure. After the source/drain is formed, (1) at least a recess is formed in the substrate beside the gate structure. An epitaxial structure is formed in the recess. (2) A cleaning process may be performed to clean the surface of the substrate beside the gate structure. An epitaxial structure is formed in the substrate beside the gate structure.