The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Dec. 16, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Hao Shih, Yongkang, TW;
Szu-Ying Chen, Taichung, TW;
Hsing-Lung Chen, Kaohsiung, TW;
Jen-Cheng Liu, Hsinchu, TW;
Dun-Nian Yaung, Taipei, TW;
Volume Chien, Sinying, TW;
Abstract
A method of creating a reflective shield for an image sensor device includes depositing a first dielectric layer on a substrate, wherein a photodiode is on the substrate. The method further includes removing surface topography by performing chemical mechanical polishing (CMP) on the first dielectric layer. The method further includes patterning the substrate to define an area on a surface of the first dielectric layer, wherein the area is directly above the photodiode. The method further includes depositing a layer of a material with high reflectivity on the substrate, wherein the material fills the area on the surface of the first dielectric layer. The method further includes removing excess material with high reflectivity, wherein the reflective shield is formed and is embedded in the first dielectric layer. The method further includes depositing a second dielectric material on the substrate, wherein the second dielectric material covers the reflective shield.