The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Mar. 25, 2010
Fu-lung Hsueh, Cranberry, NJ (US);
Tao Wen Chung, Zhubei, TW;
Po-yao KE, Dashe Township, TW;
Shine Chung, San Jose, CA (US);
Fu-Lung Hsueh, Cranberry, NJ (US);
Tao Wen Chung, Zhubei, TW;
Po-Yao Ke, Dashe Township, TW;
Shine Chung, San Jose, CA (US);
Abstract
In various embodiments, the fuse is formed from silicide and on top of a fin of a fin structure. Because the fuse is formed on top of a fin, its width takes the width of the fin, which is very thin. Depending on implementations, the fuse is also formed using planar technology and includes a thin width. Because the width of the fuse is relatively thin, a predetermined current can reliably cause the fuse to be opened. Further, the fuse can be used with a transistor to form a memory cell used in memory arrays, and the transistor utilizes FinFET technology.