The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2015

Filed:

Sep. 08, 2011
Applicants:

Shoko Ono, Ichihara, JP;

Kazuo Kohmura, Iwakuni, JP;

Hirofumi Tanaka, Sodegaura, JP;

Inventors:

Shoko Ono, Ichihara, JP;

Kazuo Kohmura, Iwakuni, JP;

Hirofumi Tanaka, Sodegaura, JP;

Assignee:

Mitsu Chemicals, Inc., Minato-Ku, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02334 (2013.01); H01L 21/02063 (2013.01); H01L 21/0209 (2013.01); H01L 21/3105 (2013.01); H01L 21/76831 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01); H01L 21/02087 (2013.01); H01L 21/76826 (2013.01); H01L 21/02203 (2013.01);
Abstract

The present invention provides a semiconductor device production method and a rinse used in the production method. The method includes: a sealing composition application process in which a semiconductor sealing layer is formed by applying, to at least a portion of a surface of a semiconductor substrate, a semiconductor sealing composition that includes a resin having a cationic functional group and a weight average molecular weight of from 2,000 to 600,000, wherein a content of sodium and a content of potassium are 10 mass ppb or less on an elemental basis, respectively; and, subsequently, a rinsing process in which the surface of the semiconductor substrate on which the semiconductor sealing layer has been formed is rinsed with a rinse having a pH at 25° C. of 6 or lower.


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