The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Feb. 25, 2011
Dieter Kraus, Oberkochen, DE;
Dirk Heinrich Ehm, Lauchheim, DE;
Stefan-wolfgang Schmidt, Aalen, DE;
Carl Zeiss SMT GmbH, Oberkochen, DE;
Abstract
An EUV (extreme ultraviolet) lithography apparatus () including: a housing () enclosing an interior (), at least one reflective optical element (to) arranged in the interior (), a vacuum generating unit () generating a residual gas atmosphere in the interior (), and a residual gas analyzer () detecting at least one contaminating substance () in the residual gas atmosphere. The residual gas analyzer () has a storage device () having an ion trap for storing the contaminating substance (). Additionally, a method for detecting at least one contaminating substance by residual gas analysis of a residual gas atmosphere of an EUV lithography apparatus () having a housing () having an interior (), in which at least one reflective optical element (to), is arranged, wherein the contaminating substance () is stored in a storage device () in order to carry out the residual gas analysis.