The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Dec. 20, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Po-Jui Liao, Taichung, TW;
Tsung-Lung Tsai, Tai-Nan, TW;
Chien-Ting Lin, Hsinchu, TW;
Shao-Hua Hsu, Taoyuan County, TW;
Yeng-Peng Wang, Kaohsiung, TW;
Chun-Hsien Lin, Tainan, TW;
Chan-Lon Yang, Taipei, TW;
Guang-Yaw Hwang, Tainan, TW;
Shin-Chi Chen, Tainan, TW;
Hung-Ling Shih, Chiayi County, TW;
Jiunn-Hsiung Liao, Tainan, TW;
Chia-Wen Liang, Hsinchu County, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor device having a metal gate includes a substrate having a first gate trench and a second gate trench formed thereon, a gate dielectric layer respectively formed in the first gate trench and the second gate trench, a first work function metal layer formed on the gate dielectric layer in the first gate trench and the second gate trench, a second work function metal layer respectively formed in the first gate trench and the second gate trench, and a filling metal layer formed on the second work function metal layer. An opening width of the second gate trench is larger than an opening width of the first gate trench. An upper area of the second work function metal layer in the first gate trench is wider than a lower area of the second work function metal layer in the first gate trench.