The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Aug. 29, 2011
Naoharu Sugiyama, Kanagawa-ken, JP;
Taisuke Sato, Kanagawa-ken, JP;
Hiroshi Ono, Kanagawa-ken, JP;
Satoshi Mitsugi, Kanagawa-ken, JP;
Tomonari Shioda, Kanagawa-ken, JP;
Jongil Hwang, Kanagawa-ken, JP;
Hung Hung, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Naoharu Sugiyama, Kanagawa-ken, JP;
Taisuke Sato, Kanagawa-ken, JP;
Hiroshi Ono, Kanagawa-ken, JP;
Satoshi Mitsugi, Kanagawa-ken, JP;
Tomonari Shioda, Kanagawa-ken, JP;
Jongil Hwang, Kanagawa-ken, JP;
Hung Hung, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.