The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Feb. 08, 2012
Chieh-te Chen, Kaohsiung, TW;
Yi-po Lin, Tainan, TW;
Jiunn-hsiung Liao, Tainan, TW;
Shui-yen LU, Hsinchu County, TW;
Li-chiang Chen, Tainan, TW;
Chieh-Te Chen, Kaohsiung, TW;
Yi-Po Lin, Tainan, TW;
Jiunn-Hsiung Liao, Tainan, TW;
Shui-Yen Lu, Hsinchu County, TW;
Li-Chiang Chen, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor structure includes a substrate, a resist layer, a dielectric material, two U-shaped metal layers and two metals. The substrate has an isolation structure. The resist layer is located on the isolation structure. The dielectric material is located on the resist layer. Two U-shaped metal layers are located at the two sides of the dielectric material and on the resist layer. Two metals are respectively located on the two U-shaped metal layers. This way a semiconductor process for forming said semiconductor structure is provided.