The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

Jun. 19, 2012
Applicants:

Ryotaro Murakami, Kawasaki, JP;

Shuji Koyama, Kawasaki, JP;

Keisuke Kishimoto, Yokohama, JP;

Kenta Furusawa, Yokohama, JP;

Inventors:

Ryotaro Murakami, Kawasaki, JP;

Shuji Koyama, Kawasaki, JP;

Keisuke Kishimoto, Yokohama, JP;

Kenta Furusawa, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); B41J 2/16 (2006.01);
U.S. Cl.
CPC ...
B41J 2/1603 (2013.01); B41J 2/1629 (2013.01); B41J 2/1634 (2013.01); B41J 2/1639 (2013.01);
Abstract

A method for producing a liquid-discharge-head substrate includes a step of preparing a silicon substrate including, at a front-surface side of the silicon substrate, an energy generating element; a step of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a step of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a step of stopping the supply of the second etchant; and a step of, after the supply of the second etchant has been stopped, forming a liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant.


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