The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8951353 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 10, 2015

Filed:

Aug. 30, 2011
Applicants:

Yoshikazu Moriyama, Izu, JP;

Yoshihisa Ohta, Numazu, JP;

Inventors:

Yoshikazu Moriyama, Izu, JP;

Yoshihisa Ohta, Numazu, JP;

Assignee:

NuFlare Technology, Inc., Numazu-shi, Shizuoka-ken, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C23C 16/52 (2006.01); C23C 14/58 (2006.01); C23C 14/54 (2006.01); H01L 21/205 (2006.01); C23C 16/56 (2006.01); C23C 14/50 (2006.01); C23C 16/24 (2006.01); C30B 25/02 (2006.01); C30B 25/10 (2006.01); C30B 25/16 (2006.01); C30B 29/06 (2006.01); C23C 14/06 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/56 (2013.01); C23C 14/5806 (2013.01); C23C 14/54 (2013.01); C23C 14/505 (2013.01); C23C 14/541 (2013.01); C23C 16/45504 (2013.01); C23C 16/45508 (2013.01); C23C 16/463 (2013.01); C23C 16/24 (2013.01); C23C 16/4584 (2013.01); C23C 16/46 (2013.01); C30B 25/02 (2013.01); C30B 25/10 (2013.01); C30B 25/16 (2013.01); C30B 29/06 (2013.01); C23C 14/0617 (2013.01); C23C 14/0635 (2013.01); C23C 14/0652 (2013.01); C23C 14/0682 (2013.01); H01L 21/02532 (2013.01); H01L 21/02546 (2013.01); H01L 21/0262 (2013.01);
Abstract

A manufacturing method for semiconductor device includes: loading a wafer to a reaction chamber and placing the wafer on a support member; supplying process gas including source gas to a surface of the wafer, controlling a heater output and heating the wafer to a predetermined temperature while rotating the wafer at a first rotational speed, and thereby forming a film on a surface of the wafer; stopping supplying the source gas; decreasing a rotational speed of the wafer to a second rotational speed which enables an offset balance of the wafer to be maintained and stopping the heater output; and decreasing a temperature of the wafer while rotating the wafer at the second rotational speed.


Find Patent Forward Citations

Moriyama, Yoshikazu. (2015). Manufacturing method and apparatus for semiconductor device (U.S. Patent No. 8951353). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8951353

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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