The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Nov. 01, 2011
Raymond Nicholas Vrtis, Orefield, PA (US);
Mark Leonard O'neill, San Marcos, CA (US);
Jean Louise Vincent, Bethlehem, PA (US);
Aaron Scott Lukas, Washington, DC (US);
Mary Kathryn Haas, Emmaus, PA (US);
Raymond Nicholas Vrtis, Orefield, PA (US);
Mark Leonard O'Neill, San Marcos, CA (US);
Jean Louise Vincent, Bethlehem, PA (US);
Aaron Scott Lukas, Washington, DC (US);
Mary Kathryn Haas, Emmaus, PA (US);
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.