The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Sep. 21, 2012
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Te-Liang Lee, Hsin-Chu, TW;

Chin-Yuan Ko, Hsin-Chu, TW;

Ming-Yih Wang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device includes an N-channel transistor and a P-channel transistor. A word line is electrically connected to a drain terminal of the N-channel transistor, and a source terminal of the P-channel transistor. A first bit line is electrically connected to a source terminal of the N-channel transistor. A second bit line is electrically connected to a drain terminal of the P-channel transistor. Gate terminals of the N-channel transistor and the P-channel transistor are electrically connected and floating.


Find Patent Forward Citations

Lee, Te-Liang. (2015). Two-transistor non-volatile memory cell and related program and read methods (U.S. Patent No. 8947938). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8947938

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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