The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Oct. 16, 2012
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Anton Mauder, Kolbermoor, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Helmut Strack, Munich, DE;

Hans-Joerg Timme, Ottobrunn, DE;

Wolfgang Werner, Munich, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/263 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26506 (2013.01); H01L 21/3242 (2013.01); H01L 21/263 (2013.01);
Abstract

A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.


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