The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Aug. 05, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Matthew J. BrightSky, Pound Ridge, NY (US);

Chung H. Lam, Peekskill, NY (US);

Jing Li, Ossining, NY (US);

Alejandro G. Schrott, New York, NY (US);

Norma E. Sosa Cortes, New York, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/76 (2006.01); H01L 21/06 (2006.01); H01L 21/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 45/16 (2013.01);
Abstract

A phase change memory cell and a method for fabricating the phase change memory cell. The phase change memory cell includes a bottom electrode and a first non-conductive layer. The first non-conductive layer defines a first well, a first electrically conductive liner lines the first well, and the first well is filled with a phase change material in the phase change memory cell.


Find Patent Forward Citations

BrightSky, Matthew. (2015). Phase change memory cell with large electrode contact area (U.S. Patent No. 8946073). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8946073

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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