The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

Mar. 20, 2013
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Wei-Sheng Lei, San Jose, CA (US);

Mohammad K. Chowdhury, Santa Clara, CA (US);

Todd Egan, Fremont, CA (US);

Brad Eaton, Menlo Park, CA (US);

Madhava Rao Yalamanchili, Morgan Hill, CA (US);

Ajay Kumar, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/78 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/67069 (2013.01); H01L 21/67207 (2013.01);
Abstract

Laser and plasma etch wafer dicing using UV-curable adhesive films is described. In an example, a method includes forming a mask above the semiconductor wafer. The semiconductor wafer is coupled to a carrier substrate by a UV-curable adhesive film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The UV-curable adhesive film is then irradiated with ultra-violet (UV) light. The singulated integrated circuits are then detached from the carrier substrate.


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