The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2015

Filed:

May. 07, 2012
Applicants:

Hiroumi Ueno, Ota-Ku, JP;

Hitoshi Hoshino, Ota-Ku, JP;

Inventors:

Hiroumi Ueno, Ota-Ku, JP;

Hitoshi Hoshino, Ota-Ku, JP;

Assignee:

Disco Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); B23K 26/38 (2014.01); B23K 26/08 (2014.01); B23K 26/40 (2014.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
B23K 26/38 (2013.01); B23K 26/0853 (2013.01); B23K 26/4075 (2013.01); H01L 33/0095 (2013.01);
Abstract

In a splitting method for an optical device wafer, the wafer having optical devices formed individually in regions partitioned by a plurality of crossing scheduled splitting lines provided on a front surface and having a reflective film formed on a reverse surface, a focal point of a laser beam is positioned to the inside of the optical device wafer and the laser beam is irradiated along the scheduled splitting lines from the reverse surface side of the wafer to form modification layers in the inside of the wafer. An external force is applied to the wafer to split the wafer along the scheduled splitting lines and form a plurality of optical device chips. The laser beam has a wavelength that produces transmittance through the reflective film equal to or higher than 80%.


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