The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Mar. 01, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Kuo-Yu Cheng, Tainan, TW;
Wei-Kung Tsai, Tainan, TW;
Kuan-Chi Tsai, Kaohsiung, TW;
Tsung-Yu Yang, Zhubei, TW;
Chung-Long Chang, Dou-Liu, TW;
Chun-Hong Chen, Xinpu Township, TW;
Chih-Ping Chao, Hsin-Chu, TW;
Chen-Yao Tang, Hsin-Chu, TW;
Yu Hung Chen, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An embodiment radio frequency area of an integrated circuit is disclosed. The radio frequency area includes a substrate having an implant region. The substrate has a first resistance. A buried oxide layer is disposed over the substrate and an interface layer is disposed between the substrate and the buried oxide layer. The interface layer has a second resistance lower than the first resistance. A silicon layer is disposed over the buried oxide layer and an interlevel dielectric is disposed in a deep trench. The deep trench extends through the silicon layer, the buried oxide layer, and the interface layer over the implant region. The deep trench may also extend through a polysilicon layer disposed over the silicon layer.