The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2015
Filed:
Jul. 11, 2013
Applicant:
National Tsing Hua University, Hsinchu, TW;
Inventors:
Cheng-Wen Wu, Hsinchu County, TW;
Po-Yuan Chen, Tainan, TW;
Ding-Ming Kwai, Hsinchu County, TW;
Yung-Fa Chou, Kaohsiung, TW;
Assignee:
National Tsing Hua University, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2014.01); G01R 31/28 (2006.01); H01L 21/66 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2601 (2013.01); G01R 31/2853 (2013.01); H01L 22/14 (2013.01); H01L 22/34 (2013.01); H01L 21/76898 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method for testing a TSV comprises charging a through-silicon-via under test to a first predetermined voltage level charging a capacitance device to a second predetermined voltage level; performing charge-sharing between the through-silicon-via and the capacitance device; and determining that the through-silicon-via under test is not faulty if the voltage level of the through-silicon-via after the charge-sharing step is within a predetermined range.