The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2015
Filed:
Sep. 13, 2012
Alexander S. Perel, Danvers, MA (US);
Craig R. Chaney, Lanesville, MA (US);
Wayne D. Leblanc, Danvers, MA (US);
Robert Lindberg, Rockport, MA (US);
Antonella Cucchetti, Manchester by the Sea, MA (US);
Neil J. Bassom, Hamilton, MA (US);
David Sporleder, Billerica, MA (US);
James Young, Rockport, MA (US);
Alexander S. Perel, Danvers, MA (US);
Craig R. Chaney, Lanesville, MA (US);
Wayne D. LeBlanc, Danvers, MA (US);
Robert Lindberg, Rockport, MA (US);
Antonella Cucchetti, Manchester by the Sea, MA (US);
Neil J. Bassom, Hamilton, MA (US);
David Sporleder, Billerica, MA (US);
James Young, Rockport, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant.