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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8933561 B1

PDFFull Text
Date of Patent:
Jan. 13, 2015

Filed:

Aug. 17, 2011

Semiconductor device for semiconductor package having through silicon vias of different heights

Applicants:

Seyoung Jeong, Suwon-si, KR;

Hogeon Song, Suwon-si, KR;

Chungsun Lee, Gunpo-si, KR;

Ho-jin Lee, Seoul, KR;

Inventors:

SeYoung Jeong, Suwon-si, KR;

Hogeon Song, Suwon-si, KR;

Chungsun Lee, Gunpo-si, KR;

Ho-Jin Lee, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Walter H Swanson

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/18 (2006.01); H01L 25/00 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 24/14 (2013.01); H01L 24/17 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 21/563 (2013.01); H01L 23/3128 (2013.01); H01L 24/04 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/97 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/13009 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/97 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06568 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/1304 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/19104 (2013.01); H01L 24/48 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/014 (2013.01); H01L 2924/10253 (2013.01); H01L 2224/16225 (2013.01);
Abstract

Provided is a semiconductor device. The semiconductor device may include a first semiconductor chip that includes a first through silicon via having a first protrusion height and a second through silicon via having a second protrusion height greater than the first protrusion height which are penetrating at least a portion of the first semiconductor chip, a second semiconductor chip may be electrically connected to the first through silicon via, and a third semiconductor chip may be electrically connected to the second through silicon via.

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