The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Mar. 06, 2013
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Srinivas D. Nemani, Sunnyvale, CA (US);
Mang-mang Ling, San Jose, CA (US);
Jeremiah T. Pender, San Jose, CA (US);
Kartik Ramaswamy, San Jose, CA (US);
Andrew Nguyen, San Jose, CA (US);
Sergey G. Belostotskiy, Santa Clara, CA (US);
Sumit Agarwal, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 45/00 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 45/00 (2013.01); H01J 37/321 (2013.01);
Abstract
Etching of a thin film stack including a lower thin film layer containing an advanced memory material is carried out in an inductively coupled plasma reactor having a dielectric RF window without exposing the lower thin film layer, and then the etch process is completed in a toroidal source plasma reactor.