The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Oct. 04, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ming-Yuan Wu, Hsin-Chu, TW;
Kong-Beng Thei, Hsin-Chu, TW;
Chiung-Han Yeh, Tainan, TW;
Harry-Hak-Lay Chuang, Singapore, SG;
Mong-Song Liang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming an integrated circuit structure includes providing a semiconductor substrate; forming patterned features over the semiconductor substrate, wherein gaps are formed between the patterned features; filling the gaps with a first filling material, wherein the first filling material has a first top surface higher than top surfaces of the patterned features; and performing a first planarization to lower the top surface of the first filling material, until the top surfaces of the patterned features are exposed. The method further includes depositing a second filling material, wherein the second filling material has a second top surface higher than the top surfaces of the patterned features; and performing a second planarization to lower the top surface of the second filling material, until the top surfaces of the patterned features are exposed.