The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Apr. 22, 2014
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Eduard A. Cartier, New York, NY (US);
Brian J. Greene, Fishkill, NY (US);
Dechao Guo, Niskayuna, NY (US);
Gan Wang, Fishkill, NY (US);
Yanfeng Wang, Cupertino, CA (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 29/66795 (2013.01); H01L 21/28017 (2013.01);
Abstract
FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.