The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Feb. 27, 2012
Hung Hung, Kanagawa-ken, JP;
Tomonari Shioda, Kanagawa-ken, JP;
Jongil Hwang, Kanagawa-ken, JP;
Naoharu Sugiyama, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Hung Hung, Kanagawa-ken, JP;
Tomonari Shioda, Kanagawa-ken, JP;
Jongil Hwang, Kanagawa-ken, JP;
Naoharu Sugiyama, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×10cmor more and less than 1×10cm. The first upper layer has a lattice constant larger than or equal to that of the first doped layer and larger than that of the first lower layer.