The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Apr. 02, 2012
Applicants:
Hyungjun Kim, Seoul, KR;
Woo-hee Kim, Seoul, KR;
Min-kyu Kim, Incheon, KR;
Steven Hung, Sunnyvale, CA (US);
Atif Noori, Saratoga, CA (US);
David Thompson, San Jose, CA (US);
Jeffrey W. Anthis, San Jose, CA (US);
Inventors:
Hyungjun Kim, Seoul, KR;
Woo-Hee Kim, Seoul, KR;
Min-Kyu Kim, Incheon, KR;
Steven Hung, Sunnyvale, CA (US);
Atif Noori, Saratoga, CA (US);
David Thompson, San Jose, CA (US);
Jeffrey W. Anthis, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02189 (2013.01); H01L 21/02192 (2013.01); H01L 21/02194 (2013.01); H01L 21/02271 (2013.01); H01L 21/0228 (2013.01); C23C 16/40 (2013.01); H01L 21/28194 (2013.01); H01L 29/517 (2013.01);
Abstract
Provided are methods for depositing a cerium doped hafnium containing high-k dielectric film on a substrate. The reagents of specific methods include hafnium tetrachloride, an organometallic complex of cerium and water.