The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Jan. 10, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Chun-Chieh Wang, Kaohsiung, TW;
Wen-Chu Hsiao, Tainan, TW;
Ying-Min Chou, Tainan, TW;
Hsiang-Hsiang Ko, Sinying, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 21/336 (2006.01); H01L 29/76 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 29/408 (2013.01);
Abstract
A method for fabricating a dual damascene metal gate includes forming a dummy gate onto a substrate, disposing a protective layer on the substrate and the dummy gate, and growing an expanding layer on sides of the dummy gate. The method further includes removing the protective layer, forming a spacer around the dummy gate, and depositing and planarizing a dielectric layer. The method further includes selectively removing the expanding layer, and removing the dummy gate.