The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Nov. 15, 2012
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Jei-Ming Chen, Tainan, TW;
Wen-Yi Teng, Kaohsiung, TW;
Chia-Lung Chang, Tainan, TW;
Chih-Chien Liu, Taipei, TW;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/3105 (2013.01); H01L 21/76819 (2013.01); H01L 21/76826 (2013.01); H01L 21/76837 (2013.01); H01L 21/02164 (2013.01);
Abstract
A method of fabricating a dielectric layer includes the following steps. At first, a dielectric layer is formed on a substrate, and a chemical mechanical polishing (CMP) process is performed on the dielectric layer. Subsequently, a surface treatment process is performed on the dielectric layer after the chemical mechanical polishing process, and the surface treatment process includes introducing an oxygen plasma.