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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8927376 B1

PDFFull Text
Date of Patent:
Jan. 06, 2015

Filed:

Apr. 24, 2014

Semiconductor device and method of forming epitaxial layer

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chin-I Liao, Tainan, TW;

Teng-Chun Hsuan, Tainan, TW;

Chin-Cheng Chien, Tainan, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Julio J Maldonado

Assistant Examiner:

Cory Eskridge

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/165 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/165 (2013.01); H01L 21/02532 (2013.01); H01L 21/0262 (2013.01); H01L 21/02639 (2013.01); H01L 27/088 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 29/66636 (2013.01); H01L 29/7834 (2013.01); H01L 29/7848 (2013.01);
Abstract

A method for forming epitaxial layer is disclosed. The method includes the steps of providing a semiconductor substrate, and forming an undoped first epitaxial layer in the semiconductor substrate. Preferably, the semiconductor substrate includes at least a recess, the undoped first epitaxial layer has a lattice constant, a bottom thickness, and a side thickness, in which the lattice constant is different from a lattice constant of the semiconductor substrate and the bottom thickness is substantially larger than or equal to the side thickness.

Find Patent Forward Citations

Liao, Chin-I. (2015). Semiconductor device and method of forming epitaxial layer (U.S. Patent No. 8927376). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8927376

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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