The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2015

Filed:

Nov. 12, 2012
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Keung Hui, Hsin-Chu, TW;

Chun-Lin Chang, Jhubei, TW;

Jong-I Mou, Hsinpu Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05C 13/00 (2006.01); C23C 14/48 (2006.01); H01J 37/302 (2006.01); H01J 37/304 (2006.01); H01J 37/317 (2006.01); H01L 21/265 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
C23C 14/48 (2013.01); H01J 37/302 (2013.01); H01J 37/304 (2013.01); H01J 37/3171 (2013.01); H01J 2237/30461 (2013.01); H01J 2237/31703 (2013.01); H01L 21/265 (2013.01); H01L 22/14 (2013.01);
Abstract

A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.


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