The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Dec. 03, 2010
Toshihiro Morisawa, Yokohama, JP;
Daisuke Shiraishi, Hikari, JP;
Satomi Inoue, Kudamatsu, JP;
Akira Kagoshima, Kudamatsu, JP;
Toshihiro Morisawa, Yokohama, JP;
Daisuke Shiraishi, Hikari, JP;
Satomi Inoue, Kudamatsu, JP;
Akira Kagoshima, Kudamatsu, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
Based on a model for determining optical emission intensity values Y at wavelengths from actuator values X of an etching apparatus, X is calculated from Y to achieve preferable Run-to-Run control over Y. A relation between X and Y is defined as a control model (matrix model C, ratio-constraint model C) based on an algebraical expression with ΔX as an input and ΔY as an output. In etching process control, ΔX (manipulated volume) is calculated from ΔY (controlled volume) using the control model, based on a non-control optical emission intensity value Y, to set X (S) for the etching process, during which Y is monitored. Based on an actual value for Y, a non-control optical emission intensity value Y to be used in the next wafer etching process is calculated.