The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2014

Filed:

Dec. 19, 2013
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kentaro Oshimo, Iwate, JP;

Masato Koakutsu, Iwate, JP;

Hiroko Sasaki, Iwate, JP;

Hiroaki Ikegawa, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); H01L 21/28556 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01);
Abstract

A method of depositing a film using an atomic layer deposition (ALD) method while rotating a turntable provided inside a chamber and including a substrate mounting portion, onto which a substrate can be mounted, to cause the substrate to pass through first and second process areas, into which different gases to be mutually reacted are respectively supplied, including coating the turntable with the film under a state where the wafer is not mounted onto the turntable, the turntable is rotated, and the substrate mounting portion has a predetermined temperature; and processing to deposit the film on the wafer under a state where the wafer is mounted onto the turntable, the turntable is rotated, and the substrate has a temperature equal to or less than the predetermined temperature.


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