The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Apr. 12, 2011
Applicants:
Feng Zhou, Austin, TX (US);
Ko-min Chang, Austin, TX (US);
Cheong Min Hong, Austin, TX (US);
Inventors:
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1675 (2013.01); H01L 45/146 (2013.01); H01L 45/1633 (2013.01);
Abstract
A resistive random access memory cell uses a substrate and includes a gate stack over the substrate. The gate stack includes a first copper layer over the substrate, a copper oxide layer over the first copper layer, and a second copper layer over the copper oxide layer.