The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Jul. 19, 2011
Applicants:
Yu-fong Huang, Hsinchu, TW;
Tzung-ting Han, Hsinchu, TW;
Inventors:
Yu-Fong Huang, Hsinchu, TW;
Tzung-Ting Han, Hsinchu, TW;
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11531 (2013.01); H01L 27/11548 (2013.01);
Abstract
A memory structure having a memory cell region and a non-memory cell region is provided. The memory structure includes a plurality of memory cells and a conductive material. The plurality of memory cells are disposed in the memory cell region, wherein a plurality of first concave portions are present in the plurality of memory cells. The conductive material extends across the memory cell region and the non-memory cell region, covers the plurality of memory cells, and extends into the plurality of first concave portions.