The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2014

Filed:

Sep. 12, 2012
Applicants:

Brian Joel Alvarez, San Jose, CA (US);

Donald R. Disney, Cupertino, CA (US);

Hui Nie, Cupertino, CA (US);

Patrick James Lazlo Hyland, San Jose, CA (US);

Inventors:

Brian Joel Alvarez, San Jose, CA (US);

Donald R. Disney, Cupertino, CA (US);

Hui Nie, Cupertino, CA (US);

Patrick James Lazlo Hyland, San Jose, CA (US);

Assignee:

Avogy, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

An embodiment of a semiconductor device includes a gallium nitride (GaN) substrate having a first surface and a second surface. The second surface is substantially opposite the first surface, at least one device layer is coupled to the first surface, and a backside metal is coupled to the second surface. A top metal stack is coupled to the at least one device layer. The top metal stack includes a contact metal coupled to a surface of the at least one device layer, a protection layer coupled to the contact metal, a diffusion barrier coupled to the protection layer, and a pad metal coupled to the diffusion barrier. The semiconductor device is configured to conduct electricity between the top metal stack and the backside metal.


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