The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Mar. 15, 2013
Semiconductor Manufacturing International Corp., Shanghai, CN;
Deyuan Xiao, Shanghai, CN;
James Hong, Shanghai, CN;
Semiconductor Manufacturing International Corp., Shanghai, CN;
Abstract
A method is provided for fabricating a nanowire-based semiconductor structure. The method includes forming a first nanowire with a first polygon-shaped cross-section having a first number of sides. The method also includes forming a semiconductor layer on surface of the first nanowire to form a second nanowire with a second polygon-shaped cross-section having a second number of sides, the second number being greater than the first number. Further, the method includes annealing the second nanowire to remove a substantial number of vertexes of the second polygon-shaped cross-section to form the nanowire with a non-polygon-shaped cross-section corresponding to the second polygon-shaped cross-section.