The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8912102 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 16, 2014

Filed:

Mar. 02, 2009
Applicants:

Chyiu Hyia Poon, Singapore, SG;

Alex K H See, Singapore, SG;

Meisheng Zhou, Singapore, SG;

Inventors:

Chyiu Hyia Poon, Singapore, SG;

Alex K H See, Singapore, SG;

Meisheng Zhou, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/268 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/268 (2013.01); H01L 21/324 (2013.01);
Abstract

A system for and method of processing an article such as a semiconductor wafer is disclosed. The wafer includes first and second surfaces which are segmented into a plurality of first and second zones. The first surface of the wafer, for example, on which devices or ICs are formed is processed by, for example, laser annealing while the second surface is heated with a backside heating source. Corresponding, or at least substantially corresponding, zones on the first and second surfaces are processed synchronously to reduce variations of post laser anneal thermal budget across the wafer.


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