The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Apr. 26, 2013
Tokyo Electron Limited, Tokyo, JP;
Tokyo Electron Limited, , JP;
Abstract
The impurity diffusion method includes: transferring an object on which the thin film is formed into a processing chamber (operation); raising a temperature of the object to a vapor diffusion temperature in the processing chamber (operation); and supplying an impurity-containing gas that contains the impurities into the processing chamber, together with an inert gas and diffusing the impurities in the thin film formed on the object of which the temperature is raised to the vapor diffusion temperature (operation), wherein in the operation, an impurity diffusion acceleration gas for accelerating the diffusion of the impurities into the thin film is supplied into the processing chamber, together with the impurity-containing gas and the inert gas.