The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Jun. 13, 2012
Morgan D. Evans, Manchester, MA (US);
Chi-chun Chen, Gloucester, MA (US);
Cheng-huang Kuo, Tainan, TW;
Morgan D. Evans, Manchester, MA (US);
Chi-Chun Chen, Gloucester, MA (US);
Cheng-Huang Kuo, Tainan, TW;
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
In one embodiment, a method of growing a heteroepitaxial layer comprises providing a patterned substrate containing patterned features having sidewalls. The method also includes directing ions toward the sidewalls in an exposure, wherein altered sidewall regions are formed, and depositing the heteroepitaxial layer under a set of deposition conditions effective to preferentially promote epitaxial growth on the sidewalls in comparison to other surfaces of the patterned features.