The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Jan. 25, 2013
Tzung-shen Chen, Guishan Township, TW;
Shuo-nan Hong, Zhubei, TW;
Yi-ching Liu, Hsinchu, TW;
Chun-hsiung Hung, Hsinchu, TW;
Tzung-Shen Chen, Guishan Township, TW;
Shuo-Nan Hong, Zhubei, TW;
Yi-Ching Liu, Hsinchu, TW;
Chun-Hsiung Hung, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
An integrated circuit device comprises a semiconductor substrate, a first memory block on the substrate comprising NAND memory cells, a second memory block on the substrate comprising NAND memory cells, and controller circuitry. The first and second memory blocks are configurable to store data for a first pattern of data usage in response to a first operation algorithm to read, program and erase data, and for a second pattern of data usage in response to a second operation algorithm to read, program and erase data, respectively. The controller circuitry is coupled to the first and second memory blocks, and is configured to execute the first and second operation algorithms, wherein a word line pass voltage for read operations applied in the first operation algorithm is at a lower voltage level than a second word line pass voltage for read operations applied in the second operation algorithm.